RFD3055LESM
- Mfr.Part #
- RFD3055LESM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 11A TO252AA
- Stock
- 17,150
- In Stock :
- 17,150
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 2.39mm
- Element Configuration :
- Single
- Fall Time (Typ) :
- 39 ns
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.73mm
- Nominal Vgs :
- 3 V
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 22 ns
- Turn On Delay Time :
- 8 ns
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 107m Ω @ 8A, 5V
- Voltage - Rated DC :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 6.22mm
- Operating Temperature :
- -55°C~175°C TJ
- Contact Plating :
- Tin
- Continuous Drain Current (ID) :
- 11A
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Threshold Voltage :
- 3V
- Current Rating :
- 11A
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation-Max :
- 38W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 16V
- Power Dissipation :
- 38W
- Resistance :
- 107mOhm
- Terminal Form :
- Gull wing
- Published :
- 2002
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±16V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Factory Lead Time :
- 8 Weeks
- Weight :
- 260.37mg
- Rise Time :
- 105ns
- JEDEC-95 Code :
- TO-252AA
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 60V
- Datasheets
- RFD3055LESM

N-Channel Tape & Reel (TR) 107m Ω @ 8A, 5V ±16V 350pF @ 25V 11.3nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
RFD3055LESM9A Description
RFD3055LESM9A is a 60v N-Channel Logic Level Power MOSFET. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFD3055LESM9A is designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The transistor RFD3055LESM9A can be operated directly from integrated circuits.
RFD3055LESM9A Features
-
11A, 60V
-
rDS(ON)= 0.107Ω
-
Temperature Compensating PSPICE? Model
-
Peak Current vs Pulse Width Curve
-
UIS Rating Curve
RFD3055LESM9A Applications
-
AC-DC Merchant Power Supply - Servers & Workstations
-
Workstation
-
Server & Mainframe
-
Switching regulators
-
Switching converters
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