RFD16N05SM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Turn-Off Delay Time :

55 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4V

Fall Time (Typ) :

30 ns

Case Connection :

DRAIN

Rise Time :

30ns

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Terminal Form :

Gull wing

Number of Terminations :

2

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

50V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current Rating :

16A

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

2.39mm

Element Configuration :

Single

JEDEC-95 Code :

TO-252AA

Length :

6.73mm

Power Dissipation-Max :

72W Tc

Turn On Delay Time :

14 ns

Width :

6.22mm

REACH SVHC :

No SVHC

FET Type :

N-Channel

Pbfree Code :

yes

Published :

2003

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Resistance :

47mOhm

Weight :

260.37mg

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

16mA

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 20V

Power Dissipation :

72W

Mount :

Surface Mount

Nominal Vgs :

4 V

Rds On (Max) @ Id, Vgs :

47m Ω @ 16A, 10V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON