RF1K4909096

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature (Max) :

150°C

Drain-source On Resistance-Max :

0.05Ohm

Terminal Position :

Dual

DS Breakdown Voltage-Min :

12V

Turn On Time-Max (ton) :

100ns

JESD-30 Code :

R-PDSO-G8

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

8

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Turn Off Time-Max (toff) :

140ns

JEDEC-95 Code :

MS-012AA

Number of Elements :

2

ECCN Code :

EAR99

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

Drain Current-Max (Abs) (ID) :

3.5A