RCX300N20

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

200V

Drain Current-Max (Abs) (ID) :

70A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Continuous Drain Current (ID) :

30A

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

200V

Rds On (Max) @ Id, Vgs :

80m Ω @ 15A, 10V

Avalanche Energy Rating (Eas) :

396 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

140A

Mount :

Through Hole

Power Dissipation-Max :

2.23W Ta 40W Tc

Published :

2012

Operating Temperature :

150°C TJ

Case Connection :

Isolated

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Packaging :

Bulk

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0427Ohm

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3 Full Pack

Configuration :

SINGLE WITH BUILT-IN DIODE

HTS Code :

8541.29.00.95

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3