RCX080N25

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 1mA

Turn-Off Delay Time :

28 ns

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3 Full Pack

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

14 ns

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

8A

Power Dissipation-Max :

2.23W Ta 35W Tc

Drain to Source Breakdown Voltage :

250V

Drain Current-Max (Abs) (ID) :

8A

Drain-source On Resistance-Max :

0.6Ohm

Number of Elements :

1

Avalanche Energy Rating (Eas) :

4.66 mJ

Transistor Element Material :

SILICON

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 25V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Number of Channels :

1

Transistor Application :

SWITCHING

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

600m Ω @ 4A, 10V

Terminal Position :

Single

Turn On Delay Time :

22 ns

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Rise Time :

28ns

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

32A

Packaging :

Bulk

Operating Temperature :

150°C TJ

JEDEC-95 Code :

TO-220AB