RB521S30T1G

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Single

Pbfree Code :

yes

Contact Plating :

Tin

Operating Temperature - Junction :

-55°C~125°C

Max Surge Current :

1A

Peak Reverse Current :

30µA

Speed :

Small Signal =< 200mA (Io), Any Speed

Average Rectified Current :

200mA

Radiation Hardening :

No

Forward Voltage :

500mV

Terminal Form :

Flat

Output Current :

200mA

Surface Mount :

yes

Lead Free :

Lead Free

Diode Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

12 Weeks

Max Operating Temperature :

125°C

Min Operating Temperature :

-55°C

Power Dissipation :

200mW

Length :

1.3mm

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Number of Elements :

1

Width :

900μm

ECCN Code :

EAR99

Voltage - Forward (Vf) (Max) @ If :

500mV @ 200mA

Voltage - Rated DC :

30V

Forward Current :

200mA

Published :

2005

Number of Pins :

2

HTS Code :

8541.10.00.70

Base Part Number :

RB521S30

REACH SVHC :

No SVHC

Current - Average Rectified (Io) :

200mA DC

Max Forward Surge Current (Ifsm) :

1A

Polarity :

Standard

Package / Case :

SC-79, SOD-523

Height :

700μm

Peak Non-Repetitive Surge Current :

1A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

2

Max Reverse Leakage Current :

30µA

Current - Reverse Leakage @ Vr :

30μA @ 10V

Pin Count :

2

JESD-609 Code :

e3

Diode Type :

Schottky

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Max Reverse Voltage (DC) :

30V

Max Repetitive Reverse Voltage (Vrrm) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

200mA