RB521CS30L315

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Peak Reverse Current :

2µA

Reverse Test Voltage :

10V

Speed :

Small Signal =< 200mA (Io), Any Speed

Output Current-Max :

0.1A

Peak Non-Repetitive Surge Current :

3A

Max Reverse Voltage (DC) :

30V

Package / Case :

SOD-882

Mounting Type :

Surface Mount

Published :

2010

Number of Elements :

1

Max Forward Surge Current (Ifsm) :

3A

Number of Terminations :

2

Current - Reverse Leakage @ Vr :

10μA @ 10V

Max Repetitive Reverse Voltage (Vrrm) :

30V

Lead Free :

Lead Free

Forward Voltage :

280mV

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks

Pin Count :

2

HTS Code :

8541.10.00.70

JESD-609 Code :

e3

Diode Type :

Schottky

Terminal Position :

BOTTOM

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Number of Phases :

1

Operating Temperature - Junction :

150°C Max

Radiation Hardening :

No

Number of Pins :

2

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Average Rectified Current :

100mA

Max Power Dissipation :

565mW

Voltage - Forward (Vf) (Max) @ If :

350mV @ 10mA

Packaging :

Tape and Reel (TR)

Application :

EFFICIENCY

Diode Element Material :

SILICON

Capacitance @ Vr, F :

8pF @ 1V 1MHz

Reference Standard :

AEC-Q101; IEC-60134

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Forward Current :

100mA