RAQ045P01TCR
- Mfr.Part #
- RAQ045P01TCR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 4.5A TSMT6
- Stock
- 3,009
- In Stock :
- 3,009
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 6V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Published :
- 2011
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 4.5V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Ta
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- 150°C TJ
- Vgs (Max) :
- -8V
- Number of Terminations :
- 6
- Power Dissipation-Max :
- 600mW Ta
- JESD-609 Code :
- e1
- Pin Count :
- 6
- DS Breakdown Voltage-Min :
- 12V
- JESD-30 Code :
- R-PDSO-G6
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Packaging :
- Cut Tape (CT)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 4.5A, 4.5V
- Pulsed Drain Current-Max (IDM) :
- 18A
- Continuous Drain Current (ID) :
- 4.5A
- Terminal Finish :
- Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Drain-source On Resistance-Max :
- 0.03Ohm
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Voltage (Vdss) :
- 12V
- Factory Lead Time :
- 26 Weeks
- Vgs(th) (Max) @ Id :
- 1V @ 1mA
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Datasheets
- RAQ045P01TCR

P-Channel Cut Tape (CT) 30m Ω @ 4.5A, 4.5V -8V 4200pF @ 6V 40nC @ 4.5V 12V SOT-23-6 Thin, TSOT-23-6
RAQ045P01TCR Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4200pF @ 6V.This device has a continuous drain current (ID) of [4.5A], which is its maximum continuous current.A maximum pulsed drain current of 18A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 12V.In order to operate this transistor, a voltage of 12V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.5V 4.5V).
RAQ045P01TCR Features
a continuous drain current (ID) of 4.5A
based on its rated peak drain current 18A.
a 12V drain to source voltage (Vdss)
RAQ045P01TCR Applications
There are a lot of ROHM Semiconductor
RAQ045P01TCR applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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