PZTA42T1G
- Mfr.Part #
- PZTA42T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT223
- Stock
- 1,750
- In Stock :
- 1,750
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Voltage (VCEO) :
- 300V
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- PZTA42
- Current Rating :
- 500mA
- Length :
- 6.5mm
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 500mV
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Frequency :
- 50MHz
- Element Configuration :
- Single
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Package / Case :
- TO-261-4, TO-261AA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 3.5mm
- Gain Bandwidth Product :
- 50MHz
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 300V
- Number of Terminations :
- 4
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 50MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 1.5W
- Power Dissipation :
- 1.5W
- Pin Count :
- 4
- Collector Emitter Breakdown Voltage :
- 300V
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Height :
- 1.57mm
- Max Breakdown Voltage :
- 300V
- Max Collector Current :
- 500mA
- Contact Plating :
- Tin
- hFE Min :
- 25
- Voltage - Rated DC :
- 300V
- Terminal Form :
- Gull wing
- Weight :
- 4.535924g
- Published :
- 2006
- Number of Pins :
- 4
- Datasheets
- PZTA42T1G

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZTA42T1G BJT Description
The PZTA42T1G high-voltage NPN Bipolar Transistor is designed for use as a general-purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. It has a Collector-Emitter voltage of up to 300 V and dissipates 1.5W power at 25°C. Plus, it has a very broad storage temperature. The maximum current it can hold to its Collector is 500 mA (DC).
PZTA42T1G BJT Features
AEC?Q101 Qualified
Pb?Free
Complement to PZTA92T1G
Halogen Free/BFR Free
RoHS Compliant
PPAP Capable
PZTA42T1G BJT Applications
Thermal Solutions
General Power Applications
Low Power Amplifiers
Push-pull topologies
Tone control
Low noise stages in audio equipment
General Purpose Switching
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