PZTA29

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-261-4, TO-261AA

Peak Reflow Temperature (Cel) :

260

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Max Power Dissipation :

1W

Published :

2005

Collector Emitter Voltage (VCEO) :

100V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

100V

Case Connection :

COLLECTOR

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Voltage - Rated DC :

100V

Packaging :

Tape and Reel (TR)

Base Part Number :

PZTA29

JESD-30 Code :

R-PDSO-G4

Time@Peak Reflow Temperature-Max (s) :

30

Emitter Base Voltage (VEBO) :

12V

Frequency - Transition :

125MHz

Lead Free :

Lead Free

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

100V

Polarity :

NPN

Terminal Position :

Dual

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Transistor Type :

NPN - Darlington

Transition Frequency :

125MHz

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

50nA

Weight :

188mg

Factory Lead Time :

5 Weeks

Mounting Type :

Surface Mount

Number of Elements :

1

hFE Min :

10000

Current Rating :

800mA

Max Collector Current :

800mA

ECCN Code :

EAR99

Power Dissipation :

1W

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.2V

JESD-609 Code :

e3

Max Breakdown Voltage :

100V