PMV65XPEAR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

618pF @ 10V

Factory Lead Time :

4 Weeks

Power Dissipation-Max :

480mW Ta 6.25W Tc

Drain-source On Resistance-Max :

0.078Ohm

DS Breakdown Voltage-Min :

20V

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Number of Elements :

1

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G3

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Reference Standard :

AEC-Q101; IEC-60134

Number of Terminations :

3

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Finish :

Tin (Sn)

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

2.8A

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Published :

2014

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Rds On (Max) @ Id, Vgs :

78m Ω @ 2.8A, 4.5V

JEDEC-95 Code :

TO-236AB

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30