PMV65XP,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOW THRESHOLD

Rds On (Max) @ Id, Vgs :

74m Ω @ 2.8A, 4.5V

Number of Elements :

1

Vgs(th) (Max) @ Id :

900mV @ 250μA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Published :

2011

Power Dissipation :

1.92W

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 4.5V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Vgs (Max) :

±12V

Continuous Drain Current (ID) :

-3.9A

Input Capacitance (Ciss) (Max) @ Vds :

744pF @ 20V

Terminal Form :

Gull wing

HTS Code :

8541.29.00.75

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Power Dissipation-Max :

480mW Ta

JESD-609 Code :

e3

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Drain-source On Resistance-Max :

0.076Ohm

FET Type :

P-Channel

Qualification Status :

Not Qualified

Pin Count :

3

Drain to Source Voltage (Vdss) :

20V