PMV65ENEAR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Factory Lead Time :

4 Weeks

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

2.7A

Power Dissipation-Max :

490mW Ta 6.25W Tc

Series :

Automotive, AEC-Q101

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Terminal Position :

Dual

Pin Count :

3

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-236AB

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Drain-source On Resistance-Max :

0.075Ohm

Drain to Source Voltage (Vdss) :

40V

Number of Terminations :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Reference Standard :

AEC-Q101; IEC-60134

JESD-30 Code :

R-PDSO-G3

Published :

2016

Rds On (Max) @ Id, Vgs :

75m Ω @ 2.7A, 10V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

DS Breakdown Voltage-Min :

40V

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 20V

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE