PMV130ENEAR

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

2.1A

Number of Terminations :

3

JESD-30 Code :

R-PDSO-G3

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 20V

Drain to Source Voltage (Vdss) :

40V

Terminal Form :

Gull wing

Terminal Position :

Dual

Factory Lead Time :

4 Weeks

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 10V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Published :

2014

DS Breakdown Voltage-Min :

40V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Reference Standard :

AEC-Q101; IEC-60134

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

120m Ω @ 1.5A, 10V

FET Type :

N-Channel

Resistance :

95mOhm

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-236AB

Mount :

Surface Mount

Power Dissipation-Max :

460mW Ta 5W Tc