PMT200EPEAX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Package / Case :

TO-261-4, TO-261AA

Drain Current-Max (Abs) (ID) :

2.4A

Transistor Application :

SWITCHING

FET Type :

P-Channel

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-G4

Pin Count :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

800mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

DS Breakdown Voltage-Min :

70V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Reference Standard :

AEC-Q101; IEC-60134

Drain to Source Voltage (Vdss) :

70V

Series :

Automotive, AEC-Q101

Drain-source On Resistance-Max :

0.167Ohm

Terminal Position :

Dual

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

167m Ω @ 2.4A, 10V

Number of Terminations :

4

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

15.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

822pF @ 35V