PMPB95ENEA/FX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta

Number of Elements :

1

Power Dissipation-Max :

1.6W Ta

Drain to Source Voltage (Vdss) :

80V

Surface Mount :

yes

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101; IEC-60134

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Pin Count :

6

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

80V

Gate Charge (Qg) (Max) @ Vgs :

14.9nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

11.2A

Rds On (Max) @ Id, Vgs :

105m Ω @ 2.8A, 10V

Package / Case :

6-UDFN Exposed Pad

FET Type :

N-Channel

JESD-30 Code :

S-PDSO-N6

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Series :

Automotive, AEC-Q101

Input Capacitance (Ciss) (Max) @ Vds :

504pF @ 40V

Drain-source On Resistance-Max :

0.105Ohm

Drain Current-Max (Abs) (ID) :

2.8A