PMPB33XP,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Published :

2012

Factory Lead Time :

8 Weeks

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Surface Mount :

yes

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Number of Terminations :

6

Package / Case :

6-UDFN Exposed Pad

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.037Ohm

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

NO LEAD

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

22A

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1575pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pin Count :

6

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

37m Ω @ 5.5A, 4.5V

Max Dual Supply Voltage :

-20V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Vgs (Max) :

±12V

Number of Pins :

6

Continuous Drain Current (ID) :

5.5A

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED