PMPB215ENEA/FX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

7.6A

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

80V

Drain-source On Resistance-Max :

0.23Ohm

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

7.2nC @ 10V

DS Breakdown Voltage-Min :

80V

Package / Case :

6-UDFN Exposed Pad

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Factory Lead Time :

8 Weeks

Reference Standard :

IEC-60134

Terminal Form :

NO LEAD

Packaging :

Tape and Reel (TR)

JESD-30 Code :

S-PDSO-N6

Series :

Automotive, AEC-Q101

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

215pF @ 40V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Terminal Position :

Dual

Power Dissipation-Max :

1.6W Ta

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

1.9A

Number of Elements :

1

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

230m Ω @ 1.9A, 10V

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING