PMPB19XP,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

-680mV

Turn On Delay Time :

16 ns

Rds On (Max) @ Id, Vgs :

22.5m Ω @ 7.2A, 4.5V

Drain-source On Resistance-Max :

0.0225Ohm

Number of Pins :

6

Mounting Type :

Surface Mount

FET Type :

P-Channel

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Max Dual Supply Voltage :

-20V

Drain to Source Voltage (Vdss) :

20V

Fall Time (Typ) :

36 ns

JESD-609 Code :

e3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2012

Package / Case :

6-UDFN Exposed Pad

Number of Channels :

1

Vgs (Max) :

±12V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

54ns

Terminal Position :

Dual

Factory Lead Time :

8 Weeks

Terminal Form :

NO LEAD

Pulsed Drain Current-Max (IDM) :

30A

Continuous Drain Current (ID) :

7.2A

Number of Terminations :

6

Vgs(th) (Max) @ Id :

900mV @ 250μA

Drain to Source Breakdown Voltage :

-20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Surface Mount :

yes

Turn-Off Delay Time :

43 ns

Input Capacitance (Ciss) (Max) @ Vds :

2890pF @ 10V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

43.2nC @ 4.5V

Pin Count :

6

Current - Continuous Drain (Id) @ 25°C :

7.2A Ta