PMPB13XNE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

900mV @ 250μA

Terminal Form :

NO LEAD

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 4.5V

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Element Configuration :

Single

Max Dual Supply Voltage :

30V

Transistor Element Material :

SILICON

Package / Case :

6-UDFN Exposed Pad

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

8A

Gate to Source Voltage (Vgs) :

650mV

Continuous Drain Current (ID) :

8A

Turn-Off Delay Time :

54 ns

Mounting Type :

Surface Mount

Number of Terminations :

6

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2195pF @ 15V

Pulsed Drain Current-Max (IDM) :

32A

Number of Pins :

6

JESD-609 Code :

e3

Published :

2014

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Turn On Delay Time :

12 ns

Pin Count :

6

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Fall Time (Typ) :

49 ns

Rds On (Max) @ Id, Vgs :

16m Ω @ 8A, 4.5V

Rise Time :

30ns

Vgs (Max) :

±12V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes