PMN40LN,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 1mA

Published :

2001

Series :

TrenchMOS™

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G6

Number of Elements :

1

Drain-source On Resistance-Max :

0.038Ohm

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

5.4A

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

ECCN Code :

EAR99

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

SC-74, SOT-457

Terminal Position :

Dual

HTS Code :

8541.29.00.75

DS Breakdown Voltage-Min :

30V

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

13.8nC @ 10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

FET Type :

N-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

555pF @ 25V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

38m Ω @ 2.5A, 10V

Pin Count :

6

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±15V

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

1.75W Tc