PML260SN,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

200V

RoHS Status :

RoHS Compliant

JESD-609 Code :

e4

Pulsed Drain Current-Max (IDM) :

15A

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

200V

Turn-Off Delay Time :

19 ns

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Elements :

1

Transistor Application :

SWITCHING

Power Dissipation-Max :

50W Tc

Number of Terminations :

8

Avalanche Energy Rating (Eas) :

22 mJ

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

8.8A Tc

Fall Time (Typ) :

7 ns

Series :

TrenchMOS™

Continuous Drain Current (ID) :

8.8A

Drain-source On Resistance-Max :

0.294Ohm

Package / Case :

8-VDFN Exposed Pad

Surface Mount :

yes

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2006

Rise Time :

11ns

Radiation Hardening :

No

Turn On Delay Time :

7 ns

Power Dissipation :

50W

Input Capacitance (Ciss) (Max) @ Vds :

657pF @ 30V

Rds On (Max) @ Id, Vgs :

294m Ω @ 2.6A, 10V

Number of Pins :

8

Terminal Finish :

NICKEL PALLADIUM GOLD

FET Type :

N-Channel

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE