PMK50XP518

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-20V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

950mV @ 250μA

Input Capacitance :

1.02nF

Rds On (Max) @ Id, Vgs :

50mOhm @ 2.8A, 4.5V

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Contact Plating :

Gold

Supplier Device Package :

8-SO

Turn-Off Delay Time :

82 ns

Vgs (Max) :

±12V

Series :

TrenchMOS™

Power Dissipation-Max :

5W Tc

Factory Lead Time :

16 Weeks

Mount :

Surface Mount

Power Dissipation :

5W

Drain to Source Voltage (Vdss) :

20V

Rds On Max :

10 MΩ

Published :

2010

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

8

Min Operating Temperature :

-55°C

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

35 ns

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Continuous Drain Current (ID) :

7.9A

Current - Continuous Drain (Id) @ 25°C :

7.9A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 20V

Rise Time :

7.5ns

Max Dual Supply Voltage :

-20V

Drain to Source Resistance :

50mOhm

Turn On Delay Time :

8.5 ns

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Radiation Hardening :

No

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Moisture Sensitivity Level (MSL) :

2 (1 Year)