PMCPB5530X

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

900mV @ 250μA

RoHS Status :

ROHS3 Compliant

Published :

2012

Mounting Type :

Surface Mount

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

34m Ω @ 3A, 4.5V

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

16 ns

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

-650mV

Rise Time :

15ns

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Number of Channels :

2

Number of Pins :

6

Continuous Drain Current (ID) :

3.4A

Gate Charge (Qg) (Max) @ Vgs :

21.7nC @ 4.5V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Number of Terminations :

6

FET Type :

N and P-Channel

Drain to Source Breakdown Voltage :

20V

Max Power Dissipation :

490mW

Pin Count :

6

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.034Ohm

Drain Current-Max (Abs) (ID) :

4A

Lead Free :

Lead Free

Turn On Delay Time :

4 ns

Turn-Off Delay Time :

40 ns

Package / Case :

6-UDFN Exposed Pad

Current - Continuous Drain (Id) @ 25°C :

4A Ta 3.4A Ta

Element Configuration :

Dual