PHT8N06LT,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Published :

1998

Gate Charge (Qg) (Max) @ Vgs :

11.2nC @ 5V

Series :

TrenchMOS™

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

HTS Code :

8541.29.00.75

Avalanche Energy Rating (Eas) :

30 mJ

Drive Voltage (Max Rds On,Min Rds On) :

5V

Drain Current-Max (Abs) (ID) :

2.2A

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

40A

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.08Ohm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Surface Mount :

yes

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

55V

DS Breakdown Voltage-Min :

55V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

80m Ω @ 5A, 5V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Number of Terminations :

4

Pin Count :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±13V

JESD-30 Code :

R-PDSO-G4

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Power Dissipation-Max :

1.8W Ta 8.3W Tc

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED