PHP55N03LTA,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Mounting Type :

Through Hole

Number of Elements :

1

Terminal Position :

Single

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Qualification Status :

Not Qualified

Power Dissipation-Max :

85W Tc

Rds On (Max) @ Id, Vgs :

14m Ω @ 25A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

25V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

2V @ 1mA

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

55A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Published :

1997

Case Connection :

DRAIN

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.018Ohm

Current - Continuous Drain (Id) @ 25°C :

55A Tc

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

220A

Avalanche Energy Rating (Eas) :

60 mJ

Packaging :

Tube

Pin Count :

3

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

25V

Series :

TrenchMOS™