PHP45NQ15T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

150V

Current - Continuous Drain (Id) @ 25°C :

45.1A Tc

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

180 mJ

Case Connection :

DRAIN

FET Type :

N-Channel

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

42m Ω @ 20A, 10V

Drain-source On Resistance-Max :

0.042Ohm

Vgs (Max) :

±20V

Terminal Position :

Single

Packaging :

Tube

Reach Compliance Code :

Unknown

Package / Case :

TO-220-3

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Power Dissipation-Max :

230W Tc

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Drain to Source Voltage (Vdss) :

150V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

90.2A

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1997

Series :

TrenchMOS™

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

45.1A

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)