PHP30NQ15T,127
- Mfr.Part #
- PHP30NQ15T,127
- Manufacturer
- Nexperia
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 29A TO220AB
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 14 ns
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 48 ns
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- TrenchMOS™
- Rds On (Max) @ Id, Vgs :
- 63m Ω @ 15A, 10V
- Published :
- 2010
- Factory Lead Time :
- 20 Weeks
- Avalanche Energy Rating (Eas) :
- 502 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Max Dual Supply Voltage :
- 150V
- Fall Time (Typ) :
- 38 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2390pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 116A
- Drain to Source Breakdown Voltage :
- 150V
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Power Dissipation-Max :
- 150W Tc
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 29A
- Radiation Hardening :
- No
- Rise Time :
- 50ns
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- HTS Code :
- 8541.29.00.75
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Power Dissipation :
- 150W
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Packaging :
- Tube
- Datasheets
- PHP30NQ15T,127

N-Channel Tube 63m Ω @ 15A, 10V ±20V 2390pF @ 25V 55nC @ 10V TO-220-3
PHP30NQ15T,127 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 502 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2390pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 29A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 48 ns.Peak drain current is 116A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 150V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
PHP30NQ15T,127 Features
the avalanche energy rating (Eas) is 502 mJ
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 116A.
PHP30NQ15T,127 Applications
There are a lot of Nexperia USA Inc.
PHP30NQ15T,127 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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