PHD45N03LTA,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Pulsed Drain Current-Max (IDM) :

160A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

40A

Terminal Finish :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

3.5V 10V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.024Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

65W Tc

Avalanche Energy Rating (Eas) :

40 mJ

Rds On (Max) @ Id, Vgs :

21m Ω @ 25A, 10V

Qualification Status :

Not Qualified

Pin Count :

3

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

25V

Number of Elements :

1

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 5V

Series :

TrenchMOS™

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

25V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2V @ 1mA

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Vgs (Max) :

±20V