PHB38N02LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 20V

Gate Charge (Qg) (Max) @ Vgs :

15.1nC @ 5V

Terminal Position :

Single

Surface Mount :

yes

Terminal Finish :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

12V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

20V

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.016Ohm

Pulsed Drain Current-Max (IDM) :

179A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

20V

FET Type :

N-Channel

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Number of Terminations :

2

Terminal Form :

Gull wing

Series :

TrenchMOS™

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 5V

Published :

2000

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

57.6W Tc

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

44.7A Tc

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

16m Ω @ 25A, 5V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

44.7A

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2