PH9930L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0135Ohm

Series :

TrenchMOS™

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e3

Number of Terminations :

4

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

9.9m Ω @ 25A, 10V

JEDEC-95 Code :

MO-235

FET Type :

N-Channel

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1565pF @ 12V

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 4.5V

Additional Feature :

LOW CONDUCTION LOSS

Surface Mount :

yes

Pin Count :

4

Power Dissipation-Max :

62.5W Tc

Package / Case :

SC-100, SOT-669

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

214A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

63A Tc

JESD-30 Code :

R-PSSO-G4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

63A

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

53 mJ