PH9025L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

12.8nC @ 4.5V

Number of Elements :

1

Number of Terminations :

4

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1414pF @ 30V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.013Ohm

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

25V

Drain to Source Voltage (Vdss) :

25V

FET Type :

N-Channel

Series :

TrenchMOS™

JESD-30 Code :

R-PSSO-G4

JEDEC-95 Code :

MO-235

Avalanche Energy Rating (Eas) :

55 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

62.5W Tc

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Additional Feature :

LOW CONDUCTION LOSS

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

9m Ω @ 10A, 10V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

66A

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

66A Tc

Published :

2007

Package / Case :

SC-100, SOT-669

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

240A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.15V @ 1mA