PH4840S,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin

Transistor Element Material :

SILICON

Lead Free :

Lead Free

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

250 mJ

Drive Voltage (Max Rds On,Min Rds On) :

7V 10V

Series :

TrenchMOS™

Drain to Source Breakdown Voltage :

40V

Number of Terminations :

4

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3660pF @ 10V

Number of Pins :

4

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Package / Case :

SC-100, SOT-669

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3V @ 1mA

Max Dual Supply Voltage :

40V

Pulsed Drain Current-Max (IDM) :

283A

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

62.5W

Fall Time (Typ) :

31 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

94.5A

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

MO-235

Turn-Off Delay Time :

82 ns

Surface Mount :

yes

Power Dissipation-Max :

62.5W Tc

JESD-609 Code :

e3

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

94.5A Tc

Turn On Delay Time :

21 ns

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 25A, 10V

Mounting Type :

Surface Mount

Rise Time :

35ns

Number of Elements :

1

Published :

2006