PH4530L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 15A, 10V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G4

Transistor Application :

SWITCHING

Number of Terminations :

4

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain to Source Voltage (Vdss) :

30V

Case Connection :

DRAIN

Number of Elements :

1

JESD-609 Code :

e3

Terminal Finish :

Tin

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

1972pF @ 10V

Vgs (Max) :

±20V

Power Dissipation-Max :

62.5W Tc

Drain-source On Resistance-Max :

0.0072Ohm

DS Breakdown Voltage-Min :

30V

Series :

TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Published :

2004

Drain Current-Max (Abs) (ID) :

80A

Gate Charge (Qg) (Max) @ Vgs :

23.5nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

FET Type :

N-Channel

Package / Case :

SC-100, SOT-669

JEDEC-95 Code :

MO-235

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

130 mJ

Vgs(th) (Max) @ Id :

2V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE