PBSS9410PA,115
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- Mfr.Part #
- PBSS9410PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS PNP 100V 2.7A 3HUSON
- Stock
- 79,199
- In Stock ：
- 79,199
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 2.1W
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 115MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 2.7A
- Power Dissipation :
- 2.1W
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- -7V
- Terminal Position :
- Dual
- Package / Case :
- 3-PowerUDFN
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 135mA, 2.7A
- Max Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 1A 2V
- Collector Emitter Voltage (VCEO) :
- 100V
- hFE Min :
- 15
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Published :
- 2010
- Gain Bandwidth Product :
- 115MHz
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Frequency :
- 115MHz
- Base Part Number :
- PBSS9410
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Datasheets
- PBSS9410PA,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS9410PA,115 Overview
In this device, the DC current gain is 170 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 450mV @ 135mA, 2.7A.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 115MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2.7A volts at Single BJT transistors maximum.
PBSS9410PA,115 Features
the DC current gain for this device is 170 @ 1A 2V
the vce saturation(Max) is 450mV @ 135mA, 2.7A
the emitter base voltage is kept at -7V
a transition frequency of 115MHz
PBSS9410PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS9410PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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