PBSS8110X,135
- Mfr.Part #
- PBSS8110X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A SOT89
- Stock
- 86,245
- In Stock :
- 86,245
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 2W
- Frequency - Transition :
- 100MHz
- Number of Pins :
- 3
- Published :
- 2007
- Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 250mA 10V
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 2W
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Zener Voltage :
- 13V
- Lead Free :
- Lead Free
- Test Current :
- 5mA
- Power - Max :
- 2W
- Tolerance :
- 5%
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 100V
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Max Collector Current :
- 1A
- Base Part Number :
- PBSS8110
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-243AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- SOT-89
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 120V
- Collector Emitter Voltage (VCEO) :
- 100V
- REACH SVHC :
- No SVHC
- Min Operating Temperature :
- -65°C
- Element Configuration :
- Single
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Breakdown Voltage :
- 100V
- Datasheets
- PBSS8110X,135
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements TO-243AA Tape & Reel (TR) Surface Mount
PBSS8110X,135 Overview
This device has a DC current gain of 150 @ 250mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As a result, it can handle voltages as low as 100V volts.Single BJT transistor comes in a supplier device package of SOT-89.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.The maximum collector current is 1A volts.
PBSS8110X,135 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the supplier device package of SOT-89
PBSS8110X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS8110X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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