PBSS8110D,115
- Mfr.Part #
- PBSS8110D,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A 6TSOP
- Stock
- 2,406
- In Stock :
- 2,406
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 700mW
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 1A
- Pin Count :
- 6
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Current - Collector Cutoff (Max) :
- 100nA
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Number of Pins :
- 6
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Published :
- 2009
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 6
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 120V
- Mount :
- Surface Mount
- Package / Case :
- SC-74, SOT-457
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Type :
- NPN
- Max Power Dissipation :
- 700mW
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 100V
- Max Breakdown Voltage :
- 100V
- Base Part Number :
- PBSS8110
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 250mA 10V
- Factory Lead Time :
- 4 Weeks
- Datasheets
- PBSS8110D,115

NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS8110D,115 Overview
DC current gain in this device equals 150 @ 250mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 1A volts.
PBSS8110D,115 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS8110D,115 Applications
There are a lot of Nexperia USA Inc.
PBSS8110D,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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