PBSS5612PA,115
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- Mfr.Part #
- PBSS5612PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NEXPERIA PBSS5612PA - SMALL SIGN
- Stock
- 14,920
- In Stock ：
- 14,920
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Base Part Number :
- PBSS5612
- hFE Min :
- 130
- Emitter Base Voltage (VEBO) :
- -7V
- Max Breakdown Voltage :
- 12V
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 60MHz
- Collector Emitter Voltage (VCEO) :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 60MHz
- Pin Count :
- 3
- Max Collector Current :
- 6A
- Number of Terminations :
- 3
- Published :
- 2010
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 12V
- Terminal Position :
- Dual
- Package / Case :
- 3-PowerUDFN
- Element Configuration :
- Single
- Transition Frequency :
- 60MHz
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 190 @ 2A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 6A
- Collector Emitter Breakdown Voltage :
- 12V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 2.1W
- Max Power Dissipation :
- 2.1W
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA
- Factory Lead Time :
- 8 Weeks
- Datasheets
- PBSS5612PA,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5612PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 190 @ 2A 2V.When VCE saturation is 300mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.In the part, the transition frequency is 60MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
PBSS5612PA,115 Features
the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 300mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 60MHz
PBSS5612PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5612PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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