PBSS5540Z,115
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- Mfr.Part #
- PBSS5540Z,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 5A SOT223
- Stock
- 170,909
- In Stock ：
- 170,909
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Frequency - Transition :
- 120MHz
- Current - Collector (Ic) (Max) :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 2V
- JESD-30 Code :
- R-PDSO-G4
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Number of Terminations :
- 4
- HTS Code :
- 8541.21.00.75
- Base Part Number :
- PBSS5540
- Package / Case :
- TO-261-4, TO-261AA
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Transition Frequency :
- 120MHz
- Terminal Position :
- Dual
- Power - Max :
- 2W
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 160mV @ 200mA, 2A
- Qualification Status :
- Not Qualified
- Transistor Type :
- PNP
- Published :
- 2001
- Datasheets
- PBSS5540Z,115
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS5540Z,115 Overview
This device has a DC current gain of 150 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 160mV @ 200mA, 2A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 120MHz.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
PBSS5540Z,115 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 160mV @ 200mA, 2A
a transition frequency of 120MHz
PBSS5540Z,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5540Z,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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