PBSS5480X,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Radiation Hardening :

No

Factory Lead Time :

4 Weeks

Max Collector Current :

4A

Transistor Type :

PNP

Published :

2003

Frequency :

125MHz

Power Dissipation :

2.5W

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

80V

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

80V

Packaging :

Tape and Reel (TR)

Power - Max :

1.6W

Collector Emitter Voltage (VCEO) :

80V

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Max Breakdown Voltage :

80V

Transistor Application :

SWITCHING

Pin Count :

3

Mounting Type :

Surface Mount

Length :

12.7mm

Number of Elements :

1

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Max Power Dissipation :

2.5W

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA

Height :

6.35mm

Base Part Number :

PBSS5480

Package / Case :

TO-243AA

Lead Free :

Lead Free

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Width :

6.35mm

Element Configuration :

Single

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

380mV @ 500mA, 5A

Gain Bandwidth Product :

125MHz

Terminal Form :

Flat

Weight :

4.535924g

Emitter Base Voltage (VEBO) :

5V

Transition Frequency :

125MHz

JESD-609 Code :

e3