PBSS5350Z,135
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- Mfr.Part #
- PBSS5350Z,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A SOT223
- Stock
- 192,397
- In Stock ：
- 192,397
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Base Part Number :
- PBSS5350
- Frequency :
- 100MHz
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Number of Pins :
- 4
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2009
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Max Collector Current :
- 3A
- Power Dissipation :
- 2W
- Max Power Dissipation :
- 2W
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 50V
- Max Breakdown Voltage :
- 50V
- Package / Case :
- TO-261-4, TO-261AA
- JESD-609 Code :
- e3
- Datasheets
- PBSS5350Z,135
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS5350Z,135 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 200mA, 2A.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
PBSS5350Z,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS5350Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5350Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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