PBSS5350X,135
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- Mfr.Part #
- PBSS5350X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A SOT89
- Stock
- 326,673
- In Stock ：
- 326,673
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 50V
- JESD-30 Code :
- R-PSSO-F3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.6W
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Base Part Number :
- PBSS5350
- Max Collector Current :
- 3A
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Published :
- 2009
- hFE Min :
- 200
- Transistor Type :
- PNP
- Package / Case :
- TO-243AA
- Mounting Type :
- Surface Mount
- Number of Pins :
- 4
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Case Connection :
- COLLECTOR
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Max Power Dissipation :
- 1.6W
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- -5V
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 300mA, 3A
- Datasheets
- PBSS5350X,135
SOT89.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5350X,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.When VCE saturation is 390mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
PBSS5350X,135 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
PBSS5350X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5350X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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