PBSS5350X,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

100MHz

Base Part Number :

PBSS5350

Emitter Base Voltage (VEBO) :

5V

Package / Case :

TO-243AA

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.6W

Transistor Type :

PNP

Max Breakdown Voltage :

50V

Factory Lead Time :

4 Weeks

Power Dissipation :

1.6W

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Max Collector Current :

3A

Transition Frequency :

100MHz

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

390mV @ 300mA, 3A

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

50V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

Current - Collector Cutoff (Max) :

100nA

JESD-609 Code :

e3

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

50V

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

1

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Terminations :

3

Polarity/Channel Type :

PNP

Operating Temperature :

150°C TJ

Gain Bandwidth Product :

100MHz

Transistor Application :

SWITCHING

Published :

2003

Radiation Hardening :

No

Lead Free :

Lead Free