PBSS5350D,135
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- Mfr.Part #
- PBSS5350D,135
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A 6TSOP
- Stock
- 207,589
- In Stock ：
- 207,589
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 6
- Collector Base Voltage (VCBO) :
- 60V
- Max Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage :
- 50V
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 3A
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Published :
- 2011
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 6
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 50V
- Package / Case :
- SC-74, SOT-457
- Max Power Dissipation :
- 750mW
- Pin Count :
- 6
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Current :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 50V
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 750mW
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Base Part Number :
- PBSS5350
- Datasheets
- PBSS5350D,135
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS5350D,135 Overview
DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 200mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.
PBSS5350D,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS5350D,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5350D,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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