PBSS5350D,135
- Mfr.Part #
- PBSS5350D,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS5350D - SMALL S
- Stock
- 207,589
- In Stock :
- 207,589
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Number of Terminations :
- 6
- Collector Emitter Voltage (VCEO) :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 750mW
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Voltage :
- 50V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Current :
- 3A
- Power Dissipation :
- 750mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Max Collector Current :
- 3A
- Max Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-74, SOT-457
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Published :
- 2011
- Pin Count :
- 6
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- PBSS5350
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Terminal Position :
- Dual
- Number of Pins :
- 6
- Datasheets
- PBSS5350D,135

PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS5350D,135 Overview
DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 200mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.
PBSS5350D,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS5350D,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5350D,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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