PBSS5350D,135

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Mfr.Part #
PBSS5350D,135
Manufacturer
NXP Semiconductors
Package / Case
SC-74, SOT-457
Datasheet
Download
Description
NOW NEXPERIA PBSS5350D - SMALL S
Stock
207,589
In Stock :
207,589

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Element Configuration :
Single
Number of Terminations :
6
Collector Emitter Voltage (VCEO) :
50V
Peak Reflow Temperature (Cel) :
260
Collector Emitter Breakdown Voltage :
50V
Emitter Base Voltage (VEBO) :
6V
Collector Base Voltage (VCBO) :
60V
Max Power Dissipation :
750mW
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
300mV @ 200mA, 2A
Transition Frequency :
100MHz
Transistor Element Material :
SILICON
Voltage :
50V
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Current :
3A
Power Dissipation :
750mW
Time@Peak Reflow Temperature-Max (s) :
40
Packaging :
Tape and Reel (TR)
Factory Lead Time :
4 Weeks
Terminal Form :
Gull wing
Frequency :
100MHz
Max Collector Current :
3A
Max Breakdown Voltage :
50V
Mount :
Surface Mount
Mounting Type :
Surface Mount
Package / Case :
SC-74, SOT-457
Current - Collector Cutoff (Max) :
100nA ICBO
JESD-609 Code :
e3
Published :
2011
Pin Count :
6
Polarity/Channel Type :
PNP
Radiation Hardening :
No
Gain Bandwidth Product :
100MHz
RoHS Status :
ROHS3 Compliant
Base Part Number :
PBSS5350
Operating Temperature :
150°C TJ
Transistor Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 2A 2V
Terminal Position :
Dual
Number of Pins :
6
Datasheets
PBSS5350D,135
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS5350D,135 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Voltage:50V, Mounting Type:Surface Mount, Package / Case:SC-74, SOT-457, Base Part Number:PBSS5350, Operating Temperature:150°C TJ, Number of Pins:6, PBSS5350D,135 pinout, PBSS5350D,135 datasheet PDF, PBSS5350D,135 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS5350D,135 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS5350D,135


PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount

PBSS5350D,135 Overview


DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 200mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.

PBSS5350D,135 Features


the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


PBSS5350D,135 Applications


There are a lot of Nexperia USA Inc.
PBSS5350D,135 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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