PBSS5350D,115

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Mfr.Part #
PBSS5350D,115
Manufacturer
NXP Semiconductors
Package / Case
SC-74, SOT-457
Datasheet
Download
Description
NEXPERIA PBSS5350D - SMALL SIGNA
Stock
10,722
In Stock :
10,722

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Radiation Hardening :
No
Power Dissipation :
750mW
Transition Frequency :
100MHz
Number of Elements :
1
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
300mV @ 200mA, 2A
Peak Reflow Temperature (Cel) :
260
Gain Bandwidth Product :
100MHz
RoHS Status :
ROHS3 Compliant
Max Collector Current :
3A
Mount :
Surface Mount
Collector Emitter Voltage (VCEO) :
50V
Terminal Position :
Dual
Max Breakdown Voltage :
50V
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Finish :
Tin (Sn)
Number of Terminations :
6
Polarity/Channel Type :
PNP
Number of Pins :
6
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Factory Lead Time :
4 Weeks
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Emitter Base Voltage (VEBO) :
6V
Frequency :
100MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Length :
6.35mm
Package / Case :
SC-74, SOT-457
Collector Emitter Breakdown Voltage :
50V
Max Power Dissipation :
750mW
Base Part Number :
PBSS5350
Mounting Type :
Surface Mount
Pin Count :
6
Packaging :
Tape and Reel (TR)
Height :
6.35mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 2A 2V
Weight :
4.535924g
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Form :
Gull wing
Published :
2007
Width :
6.35mm
Collector Base Voltage (VCBO) :
60V
Transistor Type :
PNP
Datasheets
PBSS5350D,115
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS5350D,115 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Number of Pins:6, Operating Temperature:150°C TJ, Package / Case:SC-74, SOT-457, Base Part Number:PBSS5350, Mounting Type:Surface Mount, PBSS5350D,115 pinout, PBSS5350D,115 datasheet PDF, PBSS5350D,115 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS5350D,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS5350D,115


PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount

PBSS5350D,115 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 3A volts.

PBSS5350D,115 Features


the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


PBSS5350D,115 Applications


There are a lot of Nexperia USA Inc.
PBSS5350D,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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