PBSS5330X,135
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- Mfr.Part #
- PBSS5330X,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- PBSS5330X - 30V, 3A PNP LOW VCES
- Stock
- 356,759
- In Stock ：
- 356,759
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 30V
- Pin Count :
- 3
- Transition Frequency :
- 100MHz
- JESD-30 Code :
- R-PSSO-F3
- Terminal Form :
- Flat
- Base Part Number :
- PBSS5330
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 1A 2V
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1.6W
- ECCN Code :
- EAR99
- hFE Min :
- 200
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -6V
- Collector Emitter Voltage (VCEO) :
- 320mV
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 30V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 3A
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Package / Case :
- TO-243AA
- Max Power Dissipation :
- 1.6W
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 300mA, 3A
- Number of Pins :
- 4
- Datasheets
- PBSS5330X,135
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5330X,135 Overview
In this device, the DC current gain is 175 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 320mV @ 300mA, 3A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
PBSS5330X,135 Features
the DC current gain for this device is 175 @ 1A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 100MHz
PBSS5330X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5330X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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