PBSS5220T,215
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- Mfr.Part #
- PBSS5220T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A SOT23
- Stock
- 166,911
- In Stock ：
- 166,911
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 20V
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- hFE Min :
- 225
- Number of Pins :
- 3
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 200mA, 2A
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Max Power Dissipation :
- 480mW
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 6.35mm
- Weight :
- 4.535924g
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Length :
- 6.35mm
- Collector Base Voltage (VCBO) :
- 20V
- Power Dissipation :
- 480mW
- Transistor Type :
- PNP
- Max Collector Current :
- 2A
- Collector Emitter Breakdown Voltage :
- 20V
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Published :
- 2009
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- PBSS5220
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 20V
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Datasheets
- PBSS5220T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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