PBSS5130T,215
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- Mfr.Part #
- PBSS5130T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A TO236AB
- Stock
- 184,173
- In Stock ：
- 184,173
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Base Part Number :
- PBSS5130
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Length :
- 6.35mm
- Max Collector Current :
- 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 50mA, 1A
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 260 @ 500mA 2V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 480mW
- Weight :
- 4.535924g
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Height :
- 6.35mm
- Power Dissipation :
- 480mW
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Width :
- 6.35mm
- Voltage :
- 30V
- Current :
- 15A
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 30V
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 200MHz
- hFE Min :
- 300
- Published :
- 2013
- Transition Frequency :
- 200MHz
- Element Configuration :
- Single
- Frequency :
- 200MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- PBSS5130T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5130T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 260 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 225mV @ 50mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1A volts.
PBSS5130T,215 Features
the DC current gain for this device is 260 @ 500mA 2V
the vce saturation(Max) is 225mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
PBSS5130T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5130T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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