PBSS4480X,135
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- Mfr.Part #
- PBSS4480X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A SOT89
- Stock
- 3,684
- In Stock ：
- 3,684
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Zener Voltage :
- 30V
- Power Dissipation :
- 2.5W
- Termination :
- SMD/SMT
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Power - Max :
- 1.6W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 2A 2V
- Frequency :
- 150MHz
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Terminal Form :
- Flat
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100nA
- Width :
- 6.35mm
- Test Current :
- 5mA
- hFE Min :
- 250
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- PBSS4480
- Pin Count :
- 3
- Transition Frequency :
- 150MHz
- Published :
- 2003
- Collector Base Voltage (VCBO) :
- 80V
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 550mW
- Max Breakdown Voltage :
- 80V
- Gain Bandwidth Product :
- 150MHz
- Max Collector Current :
- 4A
- Weight :
- 4.535924g
- Length :
- 12.7mm
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Height :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-243AA
- Datasheets
- PBSS4480X,135
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4480X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 175 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 270mV @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 4A volts.
PBSS4480X,135 Features
the DC current gain for this device is 175 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4480X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4480X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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